Document
Power Transistors
2SB0940 (2SB940), 2SB0940A (2SB940A)
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Silicon PNP epitaxial planar type
For power amplification For TV vertical deflection output Complementary to 2SD1264, 2SD1264A ■ Features
• High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC • Full-pack package which can be installed to the heat sink with one screw
16.7±0.3
Unit: mm
0.7±0.1
10.0±0.2 5.5±0.2
4.2±0.2
4.2±0.2 2.7±0.2
7.5±0.2
φ 3.1±0.1
Solder Dip (4.0)
1.4±0.1
1.3±0.2 0.5+0.2 –0.1
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage 2SB0940 (Base open) 2SB0940A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating −200 −150 −180 −6 −2 −3 30 2 150 −55 to +150 °C °C V A A W Unit V V
14.0±0.5
0.8±0.1
2.54±0.3 5.08±0.5
1 2 3
1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) 2SB0940 2SB0940A VEBO VBE ICBO IEBO hFE1
*
Symbol VCBO VCEO
Conditions IC = −50 µA, IE = 0 IC = −5 mA, IB = 0 IE = −500 µA, IC = 0 VCE = −10 V, IC = −400 mA VCB = −200 V, IE = 0 VEB = −4 V, IC = 0 VCE = −10 V, IC = −150 mA VCE = −10 V, IC = −400 mA IC = −500 mA, IB = −50 mA VCE = −10 V, IC = − 0.5 A, f = 10 MHz
Min −200 −150 −180 −6
Typ
Max
Unit V V
Emitter-base voltage (Collector open) Base-emitter voltage Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio
V −1 −50 −50 V µA µA V MHz
60 50
240 −1 30
hFE2 Collector-emitter saturation voltage Transition frequency VCE(sat) fT
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Q 60 to 140 P 100 to 240 Note) The part numbers in the parenthesis show conventional part number.
Publication date: February 2003 SJD00021BED
1
2SB0940, 2SB0940A
PC Ta
50
IC VCE
−600
TC=25˚C IB=–4.5mA
IC VBE
−2.0
VCE=–10V
Collector power dissipation PC (W)
40
Collector current IC (A)
Collector current IC (A)
(1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)With a 50×50×2mm Al heat sink (4)Without heat sink (PC=2W)
−500
−400
–4.0mA –3.5mA –3.0mA –2.5mA –2.0mA –1.5mA –1.0mA –0.5mA
−1.6
25˚C
30
−1.2
TC=100˚C
(1) 20
−300
− 0.8
–25˚C
−200
10 (3) (4) 0 0 40
(2)
−100
− 0.4
80
120
160
0
0
−2
−4
−6
−8
−10
−12
0
0
− 0.2
− 0.4
− 0.6
− 0.8
−1.0
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
104
−10
IC/IB=10
hFE IC
VCE=–10V
fT I C
104
VCE=–10V f=10MHz TC=25˚C
Forward current transfer ratio hFE
103
TC=100˚C 25˚C
Transition frequency fT (MHz)
−1 −1.