2SB939A

Power Transistors 2SB0939 (2SB939), 2SB0939A (2SB939A) www.DataSheet4U.net Silicon PNP epitaxial planar type Darlington For midium-speed power switching Complementary to 2SD1262, 2SD1262A 10.0±0.3 1.5±0.1 Unit: mm 8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1 Collector-base voltage (Emitter open) 2SB0939 2SB0939A VCBO VCEO VEBO IC ICP PC −60 −80 −60 −80 −7 −8 −12 45 1.3 V (6.5) Collector-emitter voltage 2SB0939 (Base open) 2SB0939A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature V V A A W B °C °C E 1 : Base 2 : Collector 3 : Emitter N-G1 Package Note) Self-supported type package is also prepared. Internal Connection C Tj Tstg 150 −55 to +150 ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cut-off current (Emitter open) 2SB0939 2SB0939A 2SB0939 2SB0939A IEBO hFE1 * hFE2 Base-emitter saturation voltage Collector-emitter saturation voltage Transition frequency Turn-on time Strage time Fall time VBE(sat) VCE(sat) fT ton tstg tf ICBO VCB = −60 V,IE = 0 VCB = −80 V,IE = 0 VEB = −7 V,IC = 0 VCE = −3 V, IC = −4 A VCE = −3 V, IC = −8 A IC = −4 A,IB = −8 mA IC = −4 A, IB = −8 mA VCE = −10 V, IC = −0.5 A, f = 1 MHz IC = −4 A, IB1 = −8 mA, IB2 = 8 mA VCC = −50 V 20 0.5 2 1 2 000 500 −2 −1.5 V V MHz µs µs µs Symbol VCEO Conditions IC = −30 mA, IB = 0 Min −60 −80 −100 −100 −2 10 000 mA  µA Typ Max Unit V Emitter-base ...