2SB936A

Power Transistors 2SB0936 (2SB936), 2SB0936A (2SB936A) www.DataSheet4U.net Silicon PNP epitaxial planar type For low-voltage switching ■ Features Low collector-emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0±0.3 1.5±0.1 Unit: mm 8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1 4.4±0.5 Parameter Collector-base voltage (Emitter open) 2SB0936 2SB0936A Symbol VCBO VCEO VEBO IC ICP PC Ta = 25°C Tj Tstg Rating −40 −50 −20 −40 −5 −10 −20 40 1.3 150 −55 to +150 Unit V 2.0±0.5 ■ Absolute Maximum Ratings TC = 25°C Collector-emitter voltage 2SB0936 (Base open) 2SB0936A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation V (6.5) V A A W °C °C 1 : Base 2 : Collector 3 : Emitter N-G1 Package Note) Self-supported type package is also prepared. Junction temperature Storage temperature ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) 2SB0936 2SB0936A 2SB0936 2SB0936A IEBO hFE1 * hFE2 Base-emitter voltage Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Turn-on time Storage time Fall time ton tstg tf IC = −3 A, IB1 = − 0.1 A, IB2 = 0.1 A VCC = −20 V 0.1 0.5 0.1 µs µs µs VBE(sat) VCE(sat) fT Cob ICBO VCB = −40 V, IE = 0 VCB = −50 V, IE...