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2SB933 Dataheets PDF



Part Number 2SB933
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Power Transistors
Datasheet 2SB933 Datasheet2SB933 Datasheet (PDF)

Power Transistors 2SB0933 (2SB933) www.DataSheet4U.net Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1256 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0±0.3 1.5±0.1 Unit : mm 8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1 4.4±0.5 ■ Absolut.

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Power Transistors 2SB0933 (2SB933) www.DataSheet4U.net Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1256 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0±0.3 1.5±0.1 Unit : mm 8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1 4.4±0.5 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating −130 −80 −7 −5 −10 40 1.3 150 −55 ∼ +150 °C °C Unit V V V A A W (6.5) 1: Base 2: Collector 3: Emitter N-G1 Package Note) Self-supported type package is also prepared. ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO IEBO hFE1 hFE2 * Base-emitter voltage Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VBE(sat) VCE(sat) fT ton tstg tf Conditions IC = −10 mA, IB = 0 VCB = −100 V, IE = 0 VEB = −5 V, IC = 0 VCE = −2 V, IC = − 0.1 A VCE = −2 V, IC = −2 A IC = −4 A, IB = − 0.2 A IC = −4 A, IB = − 0.2 A VCE = −10 V, IC = − 0.5 A, f = 10 MHz IC = −2 A, IB1 = − 0.2 A, IB2 = 0.2 A VCC = −50 V 30 0.13 0.5 0.13 45 90 260 −1.5 − 0.5 V V MHz µs µs µs Min −80 −10 −50 Typ Max Unit V µA µA  Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE2 Q 90 to 180 P 130 to 260 Note) The part number in the parenthesis shows conventional part number. Publication date: April 2003 SJD00015BED (7.6) (1.5) 1 2 0.8±0.1 R = 0.5 R = 0.5 2.54±0.3 1.0±0.1 1.4±0.1 0.4±0.1 5.08±0.5 (8.5) (6.0) 1.3 3 2.0±0.5 4.4±0.5 0 to 0.4 14.4±0.5 3.0+0.4 –0.2 1.5+0 –0.4 1 2SB0933 PC  Ta 50 −8 (1)TC=Ta (2)With a 50×50×2mm Al heat sink (3)Without heat sink (PC=1.3W) IB=–120mA TC=25˚C IC  VCE Collector-emitter saturation voltage VCE(sat) (V) −100 VCE(sat)  IC IC/IB=20 Collector power dissipation PC (W) 40 (1) 30 –100mA Collector current IC (A) −6 –80mA –60mA −10 −4 –40mA –30mA –20mA −1 20 25˚C TC=100˚C –25˚C −2 –10mA 10 (2) (3) 0 0 40 80 120 160 0 0 −2 −4 −6 − 0.1 –3mA −8 −10 − 0.01 − 0.01 − 0.1 −1 −10 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Collector current IC (A) VBE(sat) IC −100 IC/IB=20 hFE  IC 104 VCE=–2V fT  I C 104 VCE=–10V f=10MHz TC=25˚C Base-emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE −10 Transition frequency fT (MHz) 103 TC=100˚C 25˚C 103 25˚C −1 TC=–25˚.


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