Document
Power Transistors
2SB0933 (2SB933)
www.DataSheet4U.net
Silicon PNP epitaxial planar type
For Power switching Complementary to 2SD1256 ■ Features
• Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
10.0±0.3 1.5±0.1
Unit : mm
8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1
4.4±0.5
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating −130 −80 −7 −5 −10 40 1.3 150 −55 ∼ +150 °C °C Unit V V V A A W
(6.5)
1: Base 2: Collector 3: Emitter N-G1 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO IEBO hFE1 hFE2 * Base-emitter voltage Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VBE(sat) VCE(sat) fT ton tstg tf Conditions IC = −10 mA, IB = 0 VCB = −100 V, IE = 0 VEB = −5 V, IC = 0 VCE = −2 V, IC = − 0.1 A VCE = −2 V, IC = −2 A IC = −4 A, IB = − 0.2 A IC = −4 A, IB = − 0.2 A VCE = −10 V, IC = − 0.5 A, f = 10 MHz IC = −2 A, IB1 = − 0.2 A, IB2 = 0.2 A VCC = −50 V 30 0.13 0.5 0.13 45 90 260 −1.5 − 0.5 V V MHz µs µs µs Min −80 −10 −50 Typ Max Unit V µA µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE2 Q 90 to 180 P 130 to 260
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2003 SJD00015BED
(7.6)
(1.5)
1
2
0.8±0.1 R = 0.5 R = 0.5 2.54±0.3 1.0±0.1 1.4±0.1 0.4±0.1 5.08±0.5 (8.5) (6.0) 1.3 3
2.0±0.5
4.4±0.5
0 to 0.4
14.4±0.5
3.0+0.4 –0.2
1.5+0 –0.4
1
2SB0933
PC Ta
50 −8
(1)TC=Ta (2)With a 50×50×2mm Al heat sink (3)Without heat sink (PC=1.3W) IB=–120mA TC=25˚C
IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
−100
VCE(sat) IC
IC/IB=20
Collector power dissipation PC (W)
40 (1) 30
–100mA
Collector current IC (A)
−6
–80mA –60mA
−10
−4
–40mA –30mA –20mA
−1
20
25˚C TC=100˚C –25˚C
−2
–10mA
10 (2) (3) 0 0 40 80 120 160 0 0 −2 −4 −6
− 0.1
–3mA
−8
−10
− 0.01 − 0.01
− 0.1
−1
−10
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) IC
−100
IC/IB=20
hFE IC
104
VCE=–2V
fT I C
104
VCE=–10V f=10MHz TC=25˚C
Base-emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
−10
Transition frequency fT (MHz)
103
TC=100˚C 25˚C
103
25˚C
−1
TC=–25˚.