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PCHMB50A6A Dataheets PDF



Part Number PCHMB50A6A
Manufacturers Nihon Inter Electronics
Logo Nihon Inter Electronics
Description IGBT MODULE
Datasheet PCHMB50A6A DatasheetPCHMB50A6A Datasheet (PDF)

www.DataSheet4U.net IGBT MODULE Chopper 50A 600V CIRCUIT PCHMB50A6A OUTLINE DRAWING 2- fasten- tab No 110 Dimension(mm) Approximate Weight : 220g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Symbol VCES VGES IC IC PC Tj Tstg VISO FTOR PCHMB50A6A 600 +/ - 20 50 100 250 -40 to +150 -40 to +125 2500 2.04 Unit V V A W °C °C V N•m Typ. 2.0 5000 0.15 0.25 0.2 0.45 Collector Power Dissipation Junction Temperature Range Storage Tempera.

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www.DataSheet4U.net IGBT MODULE Chopper 50A 600V CIRCUIT PCHMB50A6A OUTLINE DRAWING 2- fasten- tab No 110 Dimension(mm) Approximate Weight : 220g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Symbol VCES VGES IC IC PC Tj Tstg VISO FTOR PCHMB50A6A 600 +/ - 20 50 100 250 -40 to +150 -40 to +125 2500 2.04 Unit V V A W °C °C V N•m Typ. 2.0 5000 0.15 0.25 0.2 0.45 Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Mounting Torque Module Base to Heat sink Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Switching Time Turn-on Time Fall Time Turn-off Time Symbol ICES IGES VCE(sat) VGE(th) C ies r on f off Test Condition VCE=600V,VGE=0V VGE=+/- 20V,VCE=0V IC=50A,VGE=15V VCE=5V,IC=50mA VCE=10V,VGE=0V,f=1MHz VCC= 300V RL= 6 ohm RG= 15 ohm VGE= +/- 15V Min. 4.0 - Max. 1.0 1.0 2.5 8.0 0.3 0.4 0.35 0.7 Unit mA µA V V pF µs FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Forward Current DC 1 ms IF IFM 50 100 Unit A Characteristic Peak Forward Voltage Reverse Recovery Time Symbol VF trr IF=50A,VGE=0V Test Condition IF=50A,VGE=-10V,di/dt=50A/µs Min. - Typ. 1.9 0.15 Max. 2.4 0.25 Unit V µs Unit °C/W THERMAL CHARACTERISTICS Characteristic Thermal Impedance IGBT DIODE Symbol Rth(j-c) Test Condition Junction to Case Min. - Typ. - Max. 0.5 1.0 IGBT MODULE Chopper 50A 600V Fig.1- Output Characteristics (Typical) 100 PCHMB50A6A Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 TC=25 ℃ VGE =20V 12V 15V TC=25 ℃ IC=20A 100A Collector to Emitter Voltage V CE (V) 14 80 10V 50A 12 10 8 6 4 2 0 Collector Current I C (A) 60 9V 40 20 8V 7V 0 0 2 4 6 8 10 0 4 8 12 16 20 Collector to Emitter Voltage V CE (V) Gate to Emitter Voltage V GE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) 400 350 16 TC=125 ℃ I C=20A 100A Collector to Emitter Voltage V CE (V) 14 RL=5 Ω TC=25 ℃ 14 Collector to Emitter Voltage V CE (V) 50A 12 10 8 6 4 2 0 Gate to Emitter Voltage V GE (V) 300 250 200 12 10 8 VCE =300V 150 6 200V 100 50 0 100V 4 2 0 0 4 8 12 16 20 0 50 100 150 200 Gate to Emitter Voltage V GE (V) Total Gate Charge Qg (nC) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 20000 10000 5000 Fig.6- Collector Current vs. Switching Time (Typical) 1 0.9 0.8 Cies Coes Cres VGE =0V f=1MH Z TC=25 ℃ VCC=300V RG=15 Ω VGE = ± 15V TC=25 ℃ Switching Time t ( μ s) Capacitance C (pF) 2000 1000 500 200 100 50 20 0.7 0.6 0.5 0.4 0.3 0.2 0.1 toff ton tf tr 0 20 40 60 80 100 0.2 0.5 1 2 5 10 20 50 100 200 0 Collector to Emitter Voltage V CE (V) Collector Current IC (A) IGBT MODULE Chopper 50A 600V Fig.1- Output Characteristics (Typical) 100 PCHMB50A6A Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 TC=25 ℃ VGE =20V 12V 15V TC=25 ℃ IC=20A 100A Collector to Emitter Voltage V CE (V) 14 80 10V 50A 12 10 8 6 4 2 0 Collector Current I C (A) 60 9V 40 20 8V 7V 0 0 2 4 6 8 10 0 4 8 12 16 20 Collector to Emitter Voltage V CE (V) Gate to Emitter Voltage V GE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) 400 350 16 TC=125 ℃ I C=20A 100A Collector to Emitter Voltage V CE (V) 14 RL=5 Ω TC=25 ℃ 14 Collector to Emitter Voltage V CE (V) 50A 12 10 8 6 4 2 0 Gate to Emitter Voltage V GE (V) 300 250 200 12 10 8 VCE =300V 150 6 200V 100 50 0 100V 4 2 0 0 4 8 12 16 20 0 50 100 150 200 Gate to Emitter Voltage V GE (V) Total Gate Charge Qg (nC) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 20000 10000 5000 1 Fig.6- Collector Current vs. Switching Time (Typical) 0.9 0.8 Cies Coes Cres VGE =0V f=1MH Z TC=25 ℃ VCC=300V RG=15 Ω VGE = ± 15V TC=25 ℃ Switching Time t ( μ s) Capacitance C (pF) 2000 1000 500 200 100 50 20 0.7 0.6 0.5 0.4 0.3 0.2 0.1 toff ton tf tr 0 20 40 60 80 100 0.2 0.5 1 2 5 10 20 50 100 200 0 Collector to Emitter Voltage V CE (V) Collector Current IC (A) .


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