www.DataSheet4U.net
CEM11C2
Jul. 2002
Dual Enhancement Mode Field Effect Transistor ( N and P Channel)
5
FEATURES
30V...
www.DataSheet4U.net
CEM11C2
Jul. 2002
Dual Enhancement Mode Field Effect
Transistor ( N and P Channel)
5
FEATURES
30V ,7A , RDS(ON)=30m Ω @VGS=10V. RDS(ON)=42mΩ @VGS=4.5V. -20V , -4.3A , RDS(ON)=90m Ω @VGS=-4.5V. RDS(ON)=120mΩ @VGS=-2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface Mount Package.
SO-8 1
1 2 3 4
D1
8
D1
7
D2
6
D2
5
S1
G1 S2
G2
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @TJ=125 C b -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation a Operating Junction and Storage Temperature Range
a a
Symbol VDS VGS ID IDM IS PD TJ, TSTG
N-Channel P-Channel 30 -20
Unit V V A A A W C
Ć20 Ć7 Ć 30
2.3 2.0
Ć8 Ć4.3 Ć17
-4.3
-55 to 150
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient a RįJA 62.5 C/W
5-148
CEM11C2
N-Channel ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter OFF CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS
c
Symbol
Condition
VGS = 0V,ID = 250µA VDS = 30V, VGS = 0V VGS =Ć20V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 7A VGS = 4.5V, ID = 3.5A VDS = 5V, VGS = 10V VDS = 15V, ID =7A
Min Typ C Max Unit
5
30 1 Ć100 1 24 32 30 8 804 328 79 3 30 42 V µA nA V mΩ mΩ A S
PF PF PF
ON CHARACTERISTICS b
Gate Threshold Voltage Drain-Source On-State Resistance ...
