Document
SEMiX653GD176HDc
SEMiX® 33c
Trench IGBT Modules
SEMiX653GD176HDc
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature
coefficient • UL recognised file no. E63532
Typical Applications*
• AC inverter drives • UPS • Electronic welders
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 150 °C
Tc = 25 °C Tc = 80 °C
ICnom ICRM VGES
tpsc
Tj
ICRM = 2xICnom
VCC = 1000 V VGE ≤ 20 V VCES ≤ 1700 V
Tj = 125 °C
Inverse diode
IF
Tj = 150 °C
Tc = 25 °C Tc = 80 °C
IFnom IFRM IFSM Tj
IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C
Module
It(RMS) Tstg Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0
rCE
VGE(th) ICES
Cies Coes Cres QG RGint td(on) tr Eon td(off) tf
IC = 450 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VGE = 15 V
Tj = 25 °C Tj = 125 °C
VGE=VCE, IC = 18 mA
VGE = 0 V VCE = 1700 V
Tj = 25 °C Tj = 125 °C
VCE = 25 V VGE = 0 V
f = 1 MHz f = 1 MHz f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 1200 V IC = 450 A
Tj = 125 °C Tj = 125 °C
RG on = 3.6 Ω RG off = 3.6 Ω
Tj = 125 °C Tj = 125 °C Tj = 125 °C
Eoff
Tj = 125 °C
Rth(j-c)
per IGBT
Values
1700 619 438 450 900 -20 ... 20
10
-55 ... 150
545 365 450 900 2900 -40 ... 150
600 -40 ... 125
4000
Unit
V A A A A V
µs
°C
A A A A A °C
A °C V
min.
typ.
max. Unit
2
2.45
V
2.45
2.9
V
1
1.2
V
0.9
1.1
V
2.2
2.8
mΩ
3.4
4.0
mΩ
5.2
5.8
6.4
V
3
mA
mA
39.6
nF
1.65
nF
1.31
nF
4200
nC
1.67
Ω
290
ns
90
ns
300
mJ
975
ns
190
ns
180
mJ
0.054 K/W
GD
© by SEMIKRON
Rev. 1 – 24.06.2010
1
SEMiX653GD176HDc
SEMiX® 33c
Trench IGBT Modules
SEMiX653GD176HDc
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature
coefficient • UL recognised file no. E63532
Typical Applications*
• AC inverter drives • UPS • Electronic welders
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 450 A VGE = 0 V chip
Tj = 25 °C Tj = 125 °C
VF0
Tj = 25 °C
Tj = 125 °C
rF
IRRM Qrr Err Rth(j-c)
Tj = 25 °C
Tj = 125 °C
IF = 450 A
Tj = 125 °C
di/dtoff = 4200 A/µs VGE = -15 V
Tj = 125 °C
VCC = 1200 V
Tj = 125 °C
per diode
Module
LCE RCC'+EE'
res., terminal-chip TC = 25 °C TC = 125 °C
Rth(c-s)
per module
Ms
to heat sink (M5)
Mt
to terminals (M6)
w
Temperatur Sensor
R100 B100/125
Tc=100°C (R25=5 kΩ)
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
min.
typ.
max. Unit
1.7
1.90
V
1.7
1.9
V
0.9
1.1
1.3
V
0.7
0.9
1.1
V
1.3
1.3
1.3
mΩ
1.8
1.8
1.8
mΩ
380
A
130
µC
73
mJ
0.11 K/W
20
nH
0.7
mΩ
1
mΩ
0.014
K/W
3
5
Nm
2.5
5
Nm
Nm
900
g
493 ± 5%
Ω
3550 ±2%
K
GD 2
Rev. 1 – 24.06.2010
© by SEMIKRON
SEMiX653GD176HDc
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 1 – 24.06.2010
3
SEMiX653GD176HDc
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 1 – 24.06.2010
© by SEMIKRON
SEMiX653GD176HDc
SEMiX 33c
pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
© by SEMIKRON
Rev. 1 – 24.06.2010
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