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SEMIX653GD176HDC Dataheets PDF



Part Number SEMIX653GD176HDC
Manufacturers Semikron International
Logo Semikron International
Description Trench IGBT
Datasheet SEMIX653GD176HDC DatasheetSEMIX653GD176HDC Datasheet (PDF)

SEMiX653GD176HDc SEMiX® 33c Trench IGBT Modules SEMiX653GD176HDc Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic welders Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 150 °C Tc = 25 °C Tc = 80 °C ICnom ICRM VGES tpsc Tj ICRM = 2xICnom VCC = 1000 V VGE ≤ 20 V VCES ≤ 1700 V Tj = 125 °C Inverse diode IF Tj = 150 °C Tc .

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SEMiX653GD176HDc SEMiX® 33c Trench IGBT Modules SEMiX653GD176HDc Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic welders Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 150 °C Tc = 25 °C Tc = 80 °C ICnom ICRM VGES tpsc Tj ICRM = 2xICnom VCC = 1000 V VGE ≤ 20 V VCES ≤ 1700 V Tj = 125 °C Inverse diode IF Tj = 150 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFSM Tj IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf IC = 450 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15 V Tj = 25 °C Tj = 125 °C VGE=VCE, IC = 18 mA VGE = 0 V VCE = 1700 V Tj = 25 °C Tj = 125 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 1200 V IC = 450 A Tj = 125 °C Tj = 125 °C RG on = 3.6 Ω RG off = 3.6 Ω Tj = 125 °C Tj = 125 °C Tj = 125 °C Eoff Tj = 125 °C Rth(j-c) per IGBT Values 1700 619 438 450 900 -20 ... 20 10 -55 ... 150 545 365 450 900 2900 -40 ... 150 600 -40 ... 125 4000 Unit V A A A A V µs °C A A A A A °C A °C V min. typ. max. Unit 2 2.45 V 2.45 2.9 V 1 1.2 V 0.9 1.1 V 2.2 2.8 mΩ 3.4 4.0 mΩ 5.2 5.8 6.4 V 3 mA mA 39.6 nF 1.65 nF 1.31 nF 4200 nC 1.67 Ω 290 ns 90 ns 300 mJ 975 ns 190 ns 180 mJ 0.054 K/W GD © by SEMIKRON Rev. 1 – 24.06.2010 1 SEMiX653GD176HDc SEMiX® 33c Trench IGBT Modules SEMiX653GD176HDc Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic welders Characteristics Symbol Conditions Inverse diode VF = VEC IF = 450 A VGE = 0 V chip Tj = 25 °C Tj = 125 °C VF0 Tj = 25 °C Tj = 125 °C rF IRRM Qrr Err Rth(j-c) Tj = 25 °C Tj = 125 °C IF = 450 A Tj = 125 °C di/dtoff = 4200 A/µs VGE = -15 V Tj = 125 °C VCC = 1200 V Tj = 125 °C per diode Module LCE RCC'+EE' res., terminal-chip TC = 25 °C TC = 125 °C Rth(c-s) per module Ms to heat sink (M5) Mt to terminals (M6) w Temperatur Sensor R100 B100/125 Tc=100°C (R25=5 kΩ) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; min. typ. max. Unit 1.7 1.90 V 1.7 1.9 V 0.9 1.1 1.3 V 0.7 0.9 1.1 V 1.3 1.3 1.3 mΩ 1.8 1.8 1.8 mΩ 380 A 130 µC 73 mJ 0.11 K/W 20 nH 0.7 mΩ 1 mΩ 0.014 K/W 3 5 Nm 2.5 5 Nm Nm 900 g 493 ± 5% Ω 3550 ±2% K GD 2 Rev. 1 – 24.06.2010 © by SEMIKRON SEMiX653GD176HDc Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 1 – 24.06.2010 3 SEMiX653GD176HDc Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 1 – 24.06.2010 © by SEMIKRON SEMiX653GD176HDc SEMiX 33c pinout This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © by SEMIKRON Rev. 1 – 24.06.2010 5 .


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