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SEMIX503GD126HDC Dataheets PDF



Part Number SEMIX503GD126HDC
Manufacturers Semikron International
Logo Semikron International
Description SPT IGBT
Datasheet SEMIX503GD126HDC DatasheetSEMIX503GD126HDC Datasheet (PDF)

SEMiX503GD126HDc SEMiX® 33c Trench IGBT Modules SEMiX503GD126HDc Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperatur limited to TC=125°C max. • Not for new design Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C ICnom ICRM .

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SEMiX503GD126HDc SEMiX® 33c Trench IGBT Modules SEMiX503GD126HDc Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperatur limited to TC=125°C max. • Not for new design Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 2xICnom VGES tpsc Tj VCC = 600 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 125 °C Inverse diode IF Tj = 150 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 2xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tstg Tterminal = 80 °C Visol AC sinus 50Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf IC = 300 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C chiplevel Tj = 25 °C Tj = 125 °C VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C VGE=VCE, IC = 12 mA VGE = 0 V VCE = 1200 V Tj = 25 °C Tj = 125 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 300 A VGE = ±15 V RG on = 2.2  RG off = 2.2  Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Eoff Tj = 125 °C Rth(j-c) per IGBT Values 1200 466 327 300 600 -20 ... 20 10 -40 ... 150 412 284 300 600 2000 -40 ... 150 600 -40 ... 125 4000 Unit V A A A A V µs °C A A A A A °C A °C V min. typ. max. Unit 1.7 2.10 V 2.0 2.45 V 1 1.2 V 0.9 1.1 V 2.3 3.0 m 3.7 4.5 m 5 5.8 6.5 V 4.0 mA mA 21.6 nF 1.13 nF 0.98 nF 2400 nC 2.50  275 ns 55 ns 28 mJ 625 ns 125 ns 44 mJ 0.08 K/W GD © by SEMIKRON Rev. 1 – 03.07.2013 1 SEMiX503GD126HDc SEMiX® 33c Trench IGBT Modules SEMiX503GD126HDc Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperatur limited to TC=125°C max. • Not for new design Characteristics Symbol Conditions Inverse diode VF = VEC IF = 300 A VGE = 0 V chiplevel Tj = 25 °C Tj = 125 °C VF0 chiplevel Tj = 25 °C Tj = 125 °C rF IRRM Qrr Err Rth(j-c) chiplevel Tj = 25 °C Tj = 125 °C IF = 300 A Tj = 125 °C di/dtoff = 6900 A/µs VGE = -15 V Tj = 125 °C VCC = 600 V Tj = 125 °C per diode Module LCE RCC'+EE' res., terminal-chip TC = 25 °C TC = 125 °C Rth(c-s) per module Ms to heat sink (M5) Mt to terminals (M6) min. 0.9 0.7 1.7 2.3 3 2.5 typ. 1.6 1.6 1 0.8 2.0 2.7 400 77 32.5 20 0.7 1 0.014 max. 1.80 1.8 1.1 0.9 2.3 3.0 0.14 5 5 w Temperature Sensor R100 Tc=100°C (R25=5 k) B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 900 493 ± 5% 3550 ±2% Unit V V V V m m A µC mJ K/W nH m m K/W Nm Nm Nm g  K GD 2 Rev. 1 – 03.07.2013 © by SEMIKRON SEMiX.


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