Document
SEMiX503GD126HDc
SEMiX® 33c
Trench IGBT Modules
SEMiX503GD126HDc
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature
coefficient • High short circuit capability • UL recognised file no. E63532
Typical Applications*
• AC inverter drives • UPS • Electronic Welding
Remarks
• Case temperatur limited to TC=125°C max.
• Not for new design
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 150 °C
Tc = 25 °C Tc = 80 °C
ICnom
ICRM
ICRM = 2xICnom
VGES tpsc Tj
VCC = 600 V VGE ≤ 20 V VCES ≤ 1200 V
Tj = 125 °C
Inverse diode
IF
Tj = 150 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS) Tstg
Tterminal = 80 °C
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0
rCE
VGE(th) ICES
Cies Coes Cres QG RGint td(on) tr Eon td(off) tf
IC = 300 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 125 °C
chiplevel
Tj = 25 °C Tj = 125 °C
VGE = 15 V chiplevel
Tj = 25 °C Tj = 125 °C
VGE=VCE, IC = 12 mA
VGE = 0 V VCE = 1200 V
Tj = 25 °C Tj = 125 °C
VCE = 25 V VGE = 0 V
f = 1 MHz f = 1 MHz f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V IC = 300 A VGE = ±15 V RG on = 2.2 RG off = 2.2
Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C
Eoff
Tj = 125 °C
Rth(j-c)
per IGBT
Values
1200 466 327 300 600 -20 ... 20
10
-40 ... 150
412 284 300 600 2000 -40 ... 150
600 -40 ... 125
4000
Unit
V A A A A V
µs
°C
A A A A A °C
A °C V
min.
typ.
max. Unit
1.7
2.10
V
2.0
2.45
V
1
1.2
V
0.9
1.1
V
2.3
3.0
m
3.7
4.5
m
5
5.8
6.5
V
4.0
mA
mA
21.6
nF
1.13
nF
0.98
nF
2400
nC
2.50
275
ns
55
ns
28
mJ
625
ns
125
ns
44
mJ
0.08 K/W
GD
© by SEMIKRON
Rev. 1 – 03.07.2013
1
SEMiX503GD126HDc
SEMiX® 33c
Trench IGBT Modules
SEMiX503GD126HDc
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature
coefficient • High short circuit capability • UL recognised file no. E63532
Typical Applications*
• AC inverter drives • UPS • Electronic Welding
Remarks
• Case temperatur limited to TC=125°C max.
• Not for new design
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 300 A VGE = 0 V chiplevel
Tj = 25 °C Tj = 125 °C
VF0
chiplevel
Tj = 25 °C Tj = 125 °C
rF
IRRM Qrr Err Rth(j-c)
chiplevel
Tj = 25 °C Tj = 125 °C
IF = 300 A
Tj = 125 °C
di/dtoff = 6900 A/µs VGE = -15 V
Tj = 125 °C
VCC = 600 V
Tj = 125 °C
per diode
Module
LCE RCC'+EE'
res., terminal-chip TC = 25 °C TC = 125 °C
Rth(c-s)
per module
Ms
to heat sink (M5)
Mt
to terminals (M6)
min.
0.9 0.7 1.7 2.3
3 2.5
typ.
1.6 1.6 1 0.8 2.0 2.7 400 77 32.5
20 0.7 1 0.014
max. 1.80 1.8 1.1 0.9 2.3 3.0
0.14
5 5
w
Temperature Sensor
R100
Tc=100°C (R25=5 k)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
900
493 ± 5% 3550 ±2%
Unit
V V V V m m A µC mJ K/W
nH m m K/W Nm Nm Nm
g
K
GD 2
Rev. 1 – 03.07.2013
© by SEMIKRON
SEMiX.