SEMIX404GB12VS

SEMiX404GB12Vs SEMiX® 4s SEMiX404GB12Vs Features Homogeneous Si VCE(sat) with positive temperature coefficient High short circuit capability UL recognised file no. E63532 Typical Applications* AC inverter drives UPS Electronic Welding Remarks Case temperature limited to TC=125°C max. Product reliability results are valid for Tj=150°C Dynamic values apply to the following combination of resistors: RGon,main = 1,8  RGoff,main = 1,8  RG,X = 2,2  RE,X = 0,5  Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 3xICnom VGES tpsc Tj VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 125 °C Inverse diode IF Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 3xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tstg Tterminal = 80 °C Visol AC sinus 50Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) IC = 400 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V Tj = 25 °C Tj = 150 °C VGE=VCE, IC = 16 mA VGE = 0 V VCE = 1200 V Tj = 25 °C Tj = 150 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 400 A VGE = ±15 V RG on = 2.5  RG off = 2.5  Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C di/dton = 4200 A/µs Tj = 150 °C di/dtoff = 3600 A/µs du/dtoff = 6800 V/ Tj = 150 °C µs per IGBT ...