IGBT phaseleg in ISOPLUS i4-PAC
FII 30-06D
IGBT phaseleg
in ISOPLUS i4-PACTM
IC25 = 30 A = 600 V VCES VCE(sat) typ. = 1.9 V
3 5 4
Preliminary data
1...
Description
FII 30-06D
IGBT phaseleg
in ISOPLUS i4-PACTM
IC25 = 30 A = 600 V VCES VCE(sat) typ. = 1.9 V
3 5 4
Preliminary data
1
1 2
5
IGBTs Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 90°C VGE = ±15 V; RG = 47 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 47 Ω; TVJ = 125°C non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 600 ± 20 30 18 40 VCES 10 100 V V A A A µs W
Features NPT IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching HiPerFREDTM diode - optimized fast and soft reverse recovery - low operating forward voltage - low leakage current ISOPLUS i4-PACTM package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard outline - UL registered E 72873 Applications single phaseleg - buck-boost chopper H bridge - power supplies - induction heating - four quadrant DC drives - controlled rectifier three phase bridge - AC drives - controlled rectifier
Symbol
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 1.9 2.2 4.5 0.6 200 50 55 300 30 0.92 0.68 1.1 65 2.5 2.4 6.5 0.6 V V V mA mA nA ns ns ns ns mJ mJ nF nC 1.25 K/W K/W
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC RthJH
IC = 20 A; VGE = 15 V; TVJ = 25°C TVJ = 12...
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