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2SA1667

Part Number	2SA1667
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jul 4, 2011
Detailed Description	isc Silicon PNP Power Transistor 2SA1667 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·DC ...
Datasheet	2SA1667 PDF File

Overview

isc Silicon PNP Power Transistor 2SA1667 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·DC Current Gain- : hFE= 60(Min)@ (VCE= -10V, IC= -0.
7A) ·Complement to Type 2SC4381 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV vertical output ,audio output driver and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temper...

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