isc Silicon PNP Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -2.0V(Min) @IC= -6A ·Good L...
isc Silicon
PNP Power
Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -2.0V(Min) @IC= -6A ·Good Linearity of hFE ·Complement to Type 2SC5197 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-0.8
A
80
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SA1940
isc website: www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
PNP Power
Transistor
2SA1940
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0
-120
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A
-2.0 V
VBE(on)
Base-Emitter On Voltage
IC= -4A ; VCE= -5V
-1.5 V
ICBO
Collector Cutoff Current
VCB= -120V ; IE=0
-5 μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
-5 μA
hFE-1
DC Current Gain
IC= -1A ; VCE= -5V
55
160
hFE-2
DC Current Gain
IC= -4A ; VCE= -5V
35
COB
Output Capacitance
IE=0; VCB= -10V; ftest= 1.0MHz
260
pF
fT
Current-Ga...