2SA627

isc Silicon PNP Power Transistors 2SA627 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@ IC= -5A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier and low speed switching ·Suitable for output stages of 30 ~50 watts audio amplifier and DC-DC converter. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -12 A 60 W 150 ℃ Tstg Storage Temperature -65~＋150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -0.5A ICBO Collector Cutoff Current VCB= -80V; IE= 0 IEBO Emitter Cutoff Current VEB= -3V; IC= 0 hFE DC Current Gain IC= -2A; VCE= -5V COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz fT Current-Gain—Bandwidth Product IC= -0.2A; VCE= -10V  hFE Classifications W M L 30-60 45-90 60-120 2SA627 MIN TYP. MAX UNIT -1.5 V -1.5 V -0.1 m...