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2SA663

POWER TRANSISTOR

Description

isc Silicon PNP Power Transistor 2SA663 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.3V(Max.)@ IC= -5A ·Complement to Type 2SC793 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABS...

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