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2SA766

POWER TRANSISTOR

Description

isc Silicon PNP Power Transistor 2SA766 DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= -150V(Min) ·High Collector Power Dissipation·Complement to Type 2SC1450 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Line-operated vertical deflection output ·Medium power amplifier ABSOLUTE MAXIMUM RATIN...

Inchange Semiconductor

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