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2SA770

Inchange Semiconductor

POWER TRANSISTOR


Description
isc Silicon PNP Power Transistor 2SA770 DESCRIPTION ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= -60(V)(Min.) ·Complement to Type 2SC1985 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT ...



Inchange Semiconductor

2SA770

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