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2SA794A

Part Number	2SA794A
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jul 4, 2011
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Lin...
Datasheet	2SA794A PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type 2SC1567A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency high power driver.
·Optimum for the driver stage of low-frequency and 40W to 100W output amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.
5 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction ...

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