isc Silicon PNP Power Transistor
2SA882
DESCRIPTION ·High Power Dissipation-
: PC= 100W(Max.)@TC=25℃ ·Collector-Emitte...
isc Silicon
PNP Power
Transistor
2SA882
DESCRIPTION ·High Power Dissipation-
: PC= 100W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -130V(Min.) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-130
V
VCEO Collector-Emitter Voltage
-130
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
-7
A
100
W
150
℃
Tstg
Storage Temperature
-65~200 ℃
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isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -7A; IB= -1.5A
VBE(on) Base-Emitter On Voltage
IC= -3A; VCE= -4V
ICBO
Collector Cutoff Current
VCB= -130V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -4V
hFE-2
DC Current Gain
IC= -3A; VCE= -4V
2SA882
MIN TYP. MAX UNIT
-130
V
-1.0 V
-3.0 V
-1.6 V
-0.1 mA
-0.1 mA
40
20
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