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Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA886
DESCRIPTION ·...
www.DataSheet4U.net
Inchange Semiconductor
Product Specification
Silicon
PNP Power
Transistors
2SA886
DESCRIPTION ·With TO-126 package ·Complement to type 2SC1847 ·Low collector-emitter saturation voltage APPLICATIONS ·For low-frequency power amplification
PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION
·
Absolute Maximun Ratings (Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Open emitter Open base Open collector CONDITIONS VALUE -50 -40 -5 -1.5 -3.0 1.2*1 PC Collector power dissipation TC=25℃ 5*2 Tj Tstg Junction temperature Storage temperature 150 -55~150 ℃ ℃ W UNIT V V V A A
Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink
Inchange Semiconductor
Product Specification
Silicon
PNP Power
Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO ICEO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-2mA;IB=0 IC=-1mA ;IE=0 IC=-1.5A ;IB=-0.15A IC=-2A ;IB=-0.2A
B
2SA886
MIN -40 -50
TYP.
MAX
UNIT V V
-1.0 -1.5 -1 -100 -10 80 45 150 220
V V μA μA μA
VCB=-20V; IE=0 VCE=-10V; IB=0 VEB=-5V; IC=0 IC=-1A...