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2SA887 Dataheets PDF



Part Number 2SA887
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description POWER TRANSISTOR
Datasheet 2SA887 Datasheet2SA887 Datasheet (PDF)

www.DataSheet4U.net Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA887 DESCRIPTION ·With TO-202 package ·Complement to type 2SC1848 APPLICATIONS ·Medium power amplifier PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak T.

  2SA887   2SA887



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www.DataSheet4U.net Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA887 DESCRIPTION ·With TO-202 package ·Complement to type 2SC1848 APPLICATIONS ·Medium power amplifier PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 10 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -70 -50 -5 -2 -3 1.2 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA887 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -50 V V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -70 V VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-0.1A B -0.6 -1.2 V VBEsat Base-emitter saturation voltage IC=-2A ;IB=-0.2 A B -1.0 -1.5 V hFE-1 DC current gain IC=-100mA ; VCE=-5V 30 hFE-2 DC current gain IC=-1A ; VCE=-5V 50 220 ICBO Collector cut-off current VCB=-40V; IE=0 -1.0 μA ICEO Collector cut-off current VCE=-20V; IB=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA fT Transition frequency IE=0.5A ; VCB=-5V 150 MHz ‹ hFE-2 Classifications P 50-100 Q 80-160 R 120-220 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA887 Fig.2 outline dimensions 3 .


2SA907 2SA887 2SA886


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