2SA913

isc Silicon PNP Power Transistor 2SA913 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·Complement to Type 2SC1913 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF high power dirver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1.5 A 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -0.1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -10μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(sat) Base-Emitter Saturation Voltage IC= -500mA; IB= -50mA hFE-1 DC Current Gain IC= -150mA; VCE= -10V hFE-2 DC Current Gain IC= -500mA; VCE= -5V COB Output Capacitance IE=0; VCB= -100V;f= 1.0MHz fT Current-Gain—Bandwidth Product IE= 50mA; VCE= -10V  hFE-1 Classifications P Q R S 65-110 90-155 130-220 185-330 2SA913 MIN TYP. MAX UNIT -150 V -5 V -1.0 V -1.5 V 65 330 50 15 pF 120 MHz Notice： ISC ...