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Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA913 2SA913A
DESCR...
www.DataSheet4U.net
Inchange Semiconductor
Product Specification
Silicon
PNP Power
Transistors
2SA913 2SA913A
DESCRIPTION ·With TO-220 package ·Complement to type 2SC1913/1913A ·Large collector power dissipation ·High VCEO APPLICATIONS ·Audio frequency high power driver
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER 2SA913 VCBO Collector-base voltage 2SA913A 2SA913 VCEO Collector-emitter voltage 2SA913A VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -180 -5 -1 -1.5 15 150 -55~150 V A A W ℃ ℃ Open emitter -180 -150 V CONDITIONS VALUE -150 V UNIT
Inchange Semiconductor
Product Specification
Silicon
PNP Power
Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SA913 IC=-0.1mA ,IB=0
B
2SA913 2SA913A
CONDITIONS
MIN -150
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
V -180
2SA913A IE=-10μA ,IC=0 IC=-0.5A; IB=-50mA IC=-0.3A; IB=-30mA IC=-0.5A; IB=-50mA
V(BR)EBO
Emitter-base breakdown voltage 2SA913 2SA913A 2SA913 2SA913A
-5 -1.0
V
VCEsat
Collector-emitter saturation voltage
V -1.5
VBEsat
Base-emitter saturation voltage
-1.5 IC=-0.3A; IB=-30mA VCB=-120V; IE=0 VEB=-4V; IC=0 IC=-150mA ; VCE=-10V IC=-500mA ; VCE=-5V IE=0 ;VCB=-100V;f=1MHz IC=50mA ; VCE=-10...