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Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA914
DESCRIPTION ·...
www.DataSheet4U.net
Inchange Semiconductor
Product Specification
Silicon
PNP Power
Transistors
2SA914
DESCRIPTION ·With TO-126 package ·Complement to type 2SC1953 ·Good linearity of hFE ·High VCEO APPLICATIONS ·For audio frequency power pre-amplifier
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
·
Absolute Maximun Ratings (Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -50 -100 1 150 -55~150 UNIT V V V mA mA W ℃ ℃
Inchange Semiconductor
Product Specification
Silicon
PNP Power
Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SA914
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-0.1mA;IB=0 IE=-10μA ;IC=0 IC=-30mA ;IB=-3mA
-150
V
V(BR)EBO VCEsat
Emitter-base breakdown voltage
-5
V
Collector-emitter saturation voltage
-1.0
V μA μA
ICBO
Collector cut-off current
VCB=-100V; IE=0
-1
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1
hFE
DC current gain
IC=-10mA ; VCE=-5V
90
450
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
5
pF
fT
Transition frequency
IE=10mA ; VCB=-10V
200
MHz
Q
hFE Classifications R 130-220 S 185-330 T 260-450
90-155
2
Inchange Semiconductor
Product Specification
S...