isc Silicon PNP Power Transistor
2SA958
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -200V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-200
V
...
