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2SA1011

POWER TRANSISTOR

Description

sc Silicon PNP Power Transistor 2SA1011 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Typ.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min.) ·Complement to Type 2SC2344 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage switching, audio freq...

Inchange Semiconductor

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