2SA1021

isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V (Min) ·Complement to Type 2SC2481 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV vertical deflection output applications. ·Color TV class B sound output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1.5 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1.0 A 1.2 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1021 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1021 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(on) Base-Emitter On Voltage IC= -5mA; VCE= -5V ICBO Collector Cutoff Current VCB= -150V; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -200mA; VCE= -5V fT Current-Gain—Bandwidth Product IC= -200mA; VCE= -5V COB Output Capacitance IE= 0 ; VCB= -10V;f= 1.0MHz MIN TYP. MAX UNIT -150 V -1.5 V -0.8 V -1.0 μA -1.0 μA 60 320 15 50 MHz 35 ...