2SA1044

isc Silicon PNP Power Transistor 2SA1044 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -70V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SC2434 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching applications ·High frequency power amplifier ·DC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -70 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -30 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -10 A 150 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -15A; IB= -1.5A VBE(sat) Base-Emitter Saturation Voltage IC= -15A; IB= -1.5A ICBO Collector Cutoff Current VCB= -70V ; IE= 0 ICEO Collector Cutoff Current VCE= -70V ; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE-1 DC Current Gain IC= -3A ; VCE= -5V hFE-2 DC Current Gain IC= -3...