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MJ11013

Part Number	MJ11013
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jul 4, 2011
Detailed Description	isc Silicon PNP Darlington Power Transistor MJ11013 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -90V...
Datasheet	MJ11013 PDF File

Overview

isc Silicon PNP Darlington Power Transistor MJ11013 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -90V(Min.
) ·High DC Current Gain- : hFE= 1000(Min.
)@IC= -20A ·Low Collector Saturation Voltage- : VCE (sat)= -3.
0V(Max.
)@ IC= -20A ·Complement to the NPN MJ11014 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -90 V VCEO Collector-Emitter Voltage -90 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continunous -30 A ICM C...

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