isc Silicon PNP Power Transistor
2SA1063
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC2487 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for AF amplifier, high power amplifier applications.
AB...
