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2SA1076

POWER TRANSISTOR

Description

isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2526 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·switching regulators ·DC-DC converter applications. ABSOLUTE MAXIMUM R...

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