2SA1077

isc Silicon PNP Power Transistor 2SA1077 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Fast Switching Speed ·Wide Area of Safe Operation ·Complement to Type 2SC2527 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High frequency power amplifiers ·Audio power amplifiers ·Switching regulators ·DC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -10 A 60 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VBE(on) Base to Emitter Voltage VCE= -5V; IC= 5A ICBO Collector Cutoff Current VCB= -120V; IE= 0 ICEO Collector Cutoff Current VCE= -120V; IB= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -5V hFE-2 DC Current Gain IC= -5A; VCE= -5V 2SA1077 MIN TYP. MAX UNIT...