2SA1107

isc Silicon PNP Power Transistor 2SA1107 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -10 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1107 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA; IB= 0 -150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A -2.0 V VBE(on) Base-Emitter On Voltage IC= -5A; VCE= -5V -2.0 V ICBO Collector Cutoff Current VCB= -150V; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 μA hFE-1 DC Current Gain IC= -1A; VCE= -5V 55 160 hFE-2 DC Current Gain IC= -5A; VCE= -5V 35 COB Output Capacitance IE= 0; VCB= -10V; ftest= 1.0MHz 250 pF fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -10V 50 MHz ...