isc Silicon PNP Power Transistor
2SA1111
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -150V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2591 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency drivers and high power
amplifier applications.
ABSOLUTE MAXIMUM R...
