2SA1112

isc Silicon PNP Power Transistor 2SA1112 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -180V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2592 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency drivers and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -1 A ICM Collector Current-Peak -1.5 A PC Collector Power Dissipation 20 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1112 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -100μA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -10μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(sat) Base-Emitter Saturation Voltage IC= -500mA; IB= -50mA hFE-1 DC Current Gain IC= -150mA; VCE= -10V hFE-2 DC Current Gain IC= -500mA; VCE= -5V fT Current-Gain—Bandwidth Product IE= 50mA; VCE= -10V COB Output Capacitance IE= 0; VCB= -10V; f= 1.0MHz MIN TYP. MAX UNIT -180 V -5 V -2.0 V -2.0 V 65 330 50 200 MHz 30 pF  hFE-1 Classifications P...