isc Silicon PNP Power Transistor
2SA1117
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -200V(Min.) ·Hi...
isc Silicon
PNP Power
Transistor
2SA1117
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2608 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-200
V
VCEO Collector-Emitter Voltage
-200
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-17
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
-5
A
200
W
150
℃
Tstg
Storage Temperature
-65~150 ℃
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isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A
ICBO
Collector Cutoff Current
VCB= -200V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -6V; IC= 0
hFE
DC Current Gain
IC= -8A ; VCE= -4V
fT
Current-Gain—Bandwidth Product
IE= 0.5A; VCE= -12V
Switching Times
tr
Rise Time
tstg
Storage Time
tf
Fall Time
IC= -5A, RL= 12Ω, IB1= -IB2= -0.5A, VCC= -60V
2SA1117
MIN TYP. MAX UNIT
-200
V
-3.0 V
-100 μA
-100 μA
20
20
MHz
0.6
μs
0.9
μs
0.2
μs
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