2SA1125

isc Silicon PNP Power Transistor 2SA1125 DESCRIPTION ·Low Collector Saturation Voltage ·Large Current Capability ·Complement to Type 2SC2633 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency high voltage amplifier application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -50 mA ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -100 mA 1.5 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -30mA; IB= -3mA ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE DC Current Gain IC= -10mA ; VCE= -5V  hFE Classifications Q R S T 90-155 130-220 185-330 260-450 2SA1125 MIN TYP. MAX UNIT -1.0 V -1 μA -1 μA 90 450 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electro...