2SA1129

isc Silicon PNP Power Transistor 2SA1129 DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.3(V)(Max)@IC= -3A ·Large Current Capability-IC= -7A ·Complement to Type 2SC2654 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for mid-switching applications, and is ideal for use as a ramp driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak -15 A IB Base Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3.5 A 1.5 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.1A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VBE(sat)-1 Base-Emitter Saturation Voltage IC= -3A; IB= -0.1A VBE(sat)-2 Base-Emitter Saturation Voltage IC= -5A; IB= -0.5A ICBO Collector Cutoff Current VCB= -30V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -3A ; VCE= -1V hFE-2 DC Current Gain IC= -5A ; VCE= -1V  hFE-1 Classifications M L K 40-80...