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2SA1166

POWER TRANSISTOR

Description

isc Silicon PNP Power Transistor 2SA1166 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommended for 100W high-fidelity audio frequency amplifier output sta...

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