2SA1209

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SC2911 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage switching and AF 100W predriver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -140 mA ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -200 mA -10 W -1 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1209 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -50mA; IB= -5mA ICBO Collector Cutoff Current VCB= -80V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE DC Current Gain IC= -10mA; VCE= -5V fT Current-Gain—Bandwidth Product IC= -10mA; VCE= -10V COB Collector Output Capacitance IE= 0; VCB= -10V; f= -1MHz  hFE Classifications R S T 100-200 140-280 200-400 2SA1209 MIN TYP. MAX UNIT -0.3 V -0.1 μA -0.1 μA 100 400 150 MHz 3 pF NOTICE： ISC reserves the rights to make chang...