DatasheetsPDF.com

2SA1250

POWER TRANSISTOR

Description

isc Silicon PNP Power Transistor 2SA1250 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·Low Collector Saturatioin Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power switching applications. ABSOLUTE MAXIMUM...

Inchange Semiconductor

Download 2SA1250 Datasheet

Similar Datasheet

2SA1200 SILICON PNP TRIPLE DIFFUSED TRANSISTOR - Toshiba Semiconductor
2SA1200 PNP Transistors - Kexin
2SA1201 Silicon PNP Transistor - Toshiba Semiconductor
2SA1201 Plastic-Encapsulate Transistors - GME
2SA1201 Plastic-Encapsulate Transistors - WILLAS
2SA1201 SILICON PNP EPITAXIAL TRANSISTOR - UTC
2SA1201 TRANSISTOR - Jin Yu Semiconductor
2SA1201 PNP Silicon Transistor - SeCoS
2SA1201 Transistors - Kexin
2SA1201 Plastic-Encapsulate Transistors - TRANSYS

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)