2SA1262

isc Silicon PNP Power Transistor 2SA1262 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= -0.6V(Max.)@IC= -2A ·Complement to Type 2SC3179 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -4 A IB Base Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1262 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A ICBO Collector Cutoff Current VCB= -60V; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -1A; VCE= -4V fT Current-Gain—Bandwidth Product IE= 0.2A; VCE= -12V COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz MIN TYP. MAX UNIT -60 V -0.6 V -100 μA -100 μA 40 15 MHz 90 pF NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without no...