isc Silicon PNP Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -2.0V(Min) @IC= -5A ·Good L...
isc Silicon
PNP Power
Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -2.0V(Min) @IC= -5A ·Good Linearity of hFE ·Complement to Type 2SC3180N ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-6
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-0.6
A
60
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SA1263N
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
PNP Power
Transistor
2SA1263N
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
-80
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A
-2.0 V
VBE(on)
Base-Emitter On Voltage
IC= -3A ; VCE= -5V
-1.5 V
ICBO
Collector Cutoff Current
VCB= -80V; IE= 0
-5 μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-5 μA
hFE-1
DC Current Gain
IC= -1A; VCE= -5V
55
160
hFE-2
DC Current Gain
IC= -3A; VCE= -5V
35
COB
Output Capacitance
IE=0; VCB= -10V; ftest= 1.0MHz
290
pF
fT
Current-Gain—...