2SA1279

isc Silicon PNP Power Transistor 2SA1279 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A Icm Emitter Current-pulse PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1279 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.15A VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -0.15A ICBO Collector Cutoff Current VCB= -60V; IE= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 hFE-1 DC Current Gain IC= -1.0A; VCE= -1V hFE-2 DC Current Gain IC= -3.0A; VCE= -1V fT Current-Gain—Bandwidth Product IC= -1.0A;VCE= -4V COB Output Capacitance IE=0; VCB= -10V; ftest= 1.0MHz MIN TYP. MAX UNIT -60 V -0.4 V -1.2 V -1.0 μA -1.0 μA 70 240 30 60 MHz 200 pF NOTICE： ISC reserves the rights to make cha...