2SA1292

isc Silicon PNP Power Transistor 2SA1292 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max.)@IC= -7.5A ·Fast Switching Speed ·Complement to Type 2SC3256 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Various inductance lamp drivers for electrical equipment. ·Inverters,converters(strobo,flash,fluorescent lamp lighting circuits). ·Power amplifier (high power car stereo, motor controller). ·High-speed switching (switching regulator, driver). ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -20 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -7.5A; IB= -0.375A ICBO Collector Cutoff Current VCB= -40V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE DC Current Gain IC= -1A; VCE= -2V  hFE Classif...