2SA1327

isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@IC= -8A ·High DC Current Gain- : hFE= 70(Min.)@ IC= -8A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Strobe flash applications. ·Audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -10 A ICM Collector Current-Pulse -20 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -2 A 2 W 20 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA1327 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1327 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.4A VBE(on) Base-Emitter On Voltage IC= -8A; VCE= -2V ICBO Collector Cutoff Current VCB= -50V; IE= 0 IEBO Emitter Cutoff Current VEB= -8V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -2V hFE-2 DC Current Gain IC= -8A; VCE= -2V fT Current-Gain—Bandwidth Product IC= -1A; VCE= -2V COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz  hFE-1 Classifications O Y 100-2...