isc Silicon PNP Power Transistor
2SA1329
DESCRIPTION ·Low Collector Saturation Voltage
:VCE(sat)= -0.4(V)(Max)@IC= -6A...
isc Silicon
PNP Power
Transistor
2SA1329
DESCRIPTION ·Low Collector Saturation Voltage
:VCE(sat)= -0.4(V)(Max)@IC= -6A ·High Switching Speed ·Complement to Type 2SC3346 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-80
V
VCEO Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-12
A
IB
Base Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-2
A
40
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= -6A; IB= -0.3A
ICBO
Collector Cutoff Current
VCB= -80V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= -6V; IC= 0
hFE-1
DC Current Gain
IC= -1A ; VCE= -1V
hFE-2
DC Current Gain
IC= -6A ; VCE= -1V
hFE-1 Classifications
O
Y
70-140 120-240
2SA1329
MIN TYP. MAX UNIT
-80
V
-0.4
V
-1.2
V
-10 μA
-10 μA
70
240
40
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