2SA1359

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V (Min) ·Good Linearity of hFE ·Complement to Type 2SC3422 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -3 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 1.5 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1359 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1359 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -0.5A; VCE= -2V ICBO Collector Cutoff Current VCB= -40V; IE= 0 IEBO hFE-1 hFE-2 fT COB Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product Output Capacitance VEB= -5V; IC= 0 IC= -0.5A; VCE= -2V IC= -2.5A; VCE= -2V IC= -0.5A; VCE= -2V IE= 0; VCB= -10V; f= 1.0MHz MIN TYP. MAX UNIT -40 V -0.8 V -1.0 V -0.1 μA -0...