2SA1360

isc Silicon PNP Power Transistor 2SA1360 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V (Min) ·Complement to Type 2SC3423 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -50 mA IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -5 mA 1.2 W 5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1360 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10mA; IB= -1mA VBE(on) Base-Emitter On Voltage IC= -10mA; VCE= -5V ICBO Collector Cutoff Current VCB= -150V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -10mA; VCE= -5V fT Current-Gain—Bandwidth Product IC= -10mA; VCE= -10V COB Output Capacitance IE= 0; VCB= -10V; f= 1.0MHz MIN TYP. MAX UNIT -150 V -1.0 V -0.8 V -0.1 μA -0.1 μA 80 240 200 MHz 2.5 pF  hFE Classifications O Y 80-160 120-240 ...