2SA1383

isc Silicon PNP Power Transistor DESCRIPTION ·TO-220 package ·High Collector-Emitter Breakdown Voltage ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Adudio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.1 A Total Power Dissipation @TC=25℃ 10 PT W Total Power Dissipation @Ta=25℃ 1.5 TJ Junction Temperature Tstg Storage Temperature 150 ℃ -55~150 ℃ 2SA1383 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -1mA ; RBE= ∞ VCE(sat) Collector-Emitter Saturation Voltage IC= -50mA; IB= -5mA VBE(sat) Base-Emitter Saturation Voltage IC= -50mA; IB= -5mA ICBO Collector Cutoff Current VCB= -180V ; IE=0 IEBO Emitter Cutoff Current VEB= -3V; IC=0 hFE1 DC Current Gain IC= -1mA ; VCE= -5V hFE2 DC Current Gain IC= -10mA ; VCE= -5V fT Current-Gain—Bandwidth Product IC=-20mA ; VCE= -10V  hFE-2 Classifications Q P 100-200 160-320 2SA1383 MIN TYP. MAX UNIT -180 V -0.5 V -1.5 V -1 μA -1 μA 90 100 300 50 MHz NOTICE： ISC reserves the rights to make changes of the content herein the dat...