2SA1389

isc Silicon PNP Power Transistor 2SA1389 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min) ·High Speed Switching ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High frequency power amplifiers ·Audio power amplifiers ·Switching regulators ·DC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -160 V -160 V -7 V -12 A 120 W 150 ℃ -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IE= -50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VBE(on) Base-Emitter On Voltage IC= -5A; VCE= -5V ICBO Collector Cutoff Current VCB= -160V; IE= 0 ICEO Collector Cutoff Current VCE= -160V; IB= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -5V hFE-2 DC Current Gain IC= -7A; VCE= -5V fT Current-Gain—Bandwidth Product IE= 1A; VCE= -10V 2SA1389 MIN TYP. MAX UNIT -160 V -7 V -1.8 V -1.7 ...